In flash adapter document, it is mentioned that
" A sector can be erased a limited number of times only (guaranteed by manufacturer). After that
number of erase cycles, data storage is unreliable."

" Writing small amounts of data at the same location many times, will result in wearing the flash
(the number of write/erase cycles are device-specific, see the corresponding Flash datasheet)."

" VES
VES drivers provide access to a partition entry with power failure and wearing protection. To achieve
this, VES drivers write data to random locations within the flash without needing to erase a whole
sector when the same location is modified. This is accomplished by writing to different flash locations
for the same user provided address. The VES driver provides virtual addressing, that is, the user
specified address is translated to a real flash location before a read or write operation. For this to
work, the flash size must be bigger than the addressing space visible to the user. A common rule of
thumb is 8x the virtual EEPROM size needed."
So my scnerio is the same that i want to write little very frequently in the flash, But i couldnt find any example code for ad_nvms_ves_write, ad_nvms_ves_read.

So is there any example code in which VES mode is implemeted so that i can add this feature in my project. Thanks