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SLG59H1020V.

SLG59H1020V.

HFET1™ 50 mΩ NMOS power switch

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A 20 V, 50 mΩ, 3 A, Reverse Blocking Integrated Power Switch with VIN Lockout Select and MOSFET Current Monitor Output

The SLG59H1020V is a high-performance, self-powered 50 mΩ NMOS power switch with back-to-back reverse-current blocking designed for all 4.5 V to 20 V power rails up to 3 A. Using a proprietary MOSFET design, the SLG59H1020V achieves a stable 50 mΩ RDSON across a wide input voltage range. In combining novel FET design and copper pillar interconnects, the SLG59H1020V package also exhibits a low thermal resistance for high-current operation.

Designed to operate over a -40ºC to 85ºC range, the SLG59H1020V is available in a low thermal resistance, RoHS-compliant, 1.6 x 3.0 mm STQFN package.

产品特点

  • Optimized for Telecommunications Equipment, High-performance Enterprise Computing, Motor Drives
  • 50mΩr.达森
  • Maximum Continuous Switch Current: 3 A
  • Wide Operating Supply Voltage: 4.5 V to 20 V
  • 背靠背FET反向电流阻塞，关闭时
  • Automatic nFET SOA Protection
  • 4-Level, Pin-selectable VIN Overvoltage Lockout
  • Capacitor-adjustable Inrush Current Control

产品特点

  • 两级电流限制保护：
    • Resistor-adjustable Active Current Limit
    • 固定0.5短路电流限制
  • ON-OFF Control: Active HIGH
  • 包1.6 x 3.0 x 0.55 mm stqfn-18
  • 电源轨开关
  • Multifunction Printers
  • 大型复印机
  • Telecommunications Equipment
  • 高性能计算
    • 4.5 V和20 V负载点配电
  • 电机驱动器

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